@InProceedings{ChiappimTesPesFraMac:2016:EfDiPl,
               author = "Chiappim, William and Testoni, Georgio Ernesto and Pessoa, Rodrigo 
                         S{\'a}vio and Fraga, Mariana Amorim and Maciel, Homero Santiago",
          affiliation = "{Universidade do Vale do Para{\'{\i}}ba (UNIVAP)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Universidade do 
                         Vale do Para{\'{\i}}ba (UNIVAP)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Universidade do Vale do 
                         Para{\'{\i}}ba (UNIVAP)}",
                title = "Plasma-assisted atomic layer deposition of TiO2 thin films: effect 
                         of direct plasma exposure during deposition on film structure and 
                         morphology",
                 year = "2016",
         organization = "International Conference on Advanced Nanomaterials, 7.",
             abstract = "The titanium dioxide (TiO2) has a wide range of applications both 
                         as thin film or bulk material due to many attractive properties 
                         such as wide band gap, high dielectric constant, and 
                         photocatalytic activity. As thin film several applications can be 
                         cited as photovoltaics and sensors [1]. Recent studies have shown 
                         that modification of stoichiometry, crystalline structure, 
                         morphology and, consequently, the optical/electrical properties of 
                         TiO2 films can be finely tuned by appropriately altering plasma 
                         enhanced atomic layer deposition (PEALD) process parameters, e.g. 
                         plasma power, gas flow rate and pressure and plasma exposure 
                         (direct or remote plasma) [2]. In this work, we report about the 
                         effect of direct plasma exposure during deposition on film 
                         structure and morphology of PEALD TiO2 thin films using TiCl4 
                         precursor. For this, a remote capacitively coupled 13.56 MHz 
                         oxygen plasma was used as co-reactant during ALD process and the 
                         plasma power was varied from 50 W to 200 W for a fixed process 
                         temperature of 250 ºC. In order to improve the discussions, 
                         thermal ALD of TiO2 films were performed at similar process 
                         conditions.",
  conference-location = "Aveiro, Portugal",
      conference-year = "25-27 July",
             language = "en",
        urlaccessdate = "28 abr. 2024"
}